BSP318S E6327 Infineon Technologies, BSP318S E6327 Datasheet - Page 5

• Manufacturer Part Number: BSP318S E6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP318SE6327T; SP000011112

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
W
10
10
10
10
10
A
= f (T
1.9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
-2
2
1
0
10
0
BSP318S
BSP318S
-1
DS
A
20
)
)
40
10
60
0
A
= 25 °C
80
100
10
1
120
°C
DC
V
T
V
t p = 140.0µs
A
DS
160
1 ms
10 ms
10
Rev 2.2
Page 5
2
Drain current
I
Transient thermal impedance
Z
parameter : D = t
D
thJA
K/W
= f ( T
10
10
10
10
10
A
2.8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
-2
= f (t
2
1
0
10
0
BSP318S
BSP318S
A
-5
)
p
10
20
)
single pulse
-4
10
40
-3
p
10
/ T
60
-2
10
80
-1
10
100
0
10
1
120
2008-03-21
BSP318S
10
D = 0.50
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
s
A
160
10
4