BSP318S E6327 Infineon Technologies, BSP318S E6327 Datasheet - Page 6

• Manufacturer Part Number: BSP318S E6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP318SE6327T; SP000011112

Typ. output characteristic
I
parameter: t
Drain-source on-resistance
R
parameter : I
D
DS(on)
= f ( V
0.36
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
A
6.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
BSP318S
BSP318S
DS
= f ( T
P
i
h
l
k
g
j
f
tot
e
d
); T
= 1.80W
-20
p
D
j
= 80 µs
)
j
= 2.6 A, V
=25°C
20
98%
typ
60
GS
= 4.5 V
100
c
a
b
V GS [V]
°C
a
b
c
d
e
f
g
h
i
j
k
l
V
V
T
j
DS
10.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
180
5.0
Rev 2.2
Page 6
Typ. transfer characteristics I
V
parameter: t
Gate threshold voltage
V
parameter: V
DS
GS(th)
A
3.0
V
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
15
12
11
10
9
8
7
6
5
4
3
2
1
0
-60
2 x I
0
= f ( T j )
1
D
-20
x R
p
GS
2
= 80 µs
DS(on)max
= V
20
3
DS
4
60
, I
5
D
= 20 µA
100
6
7
2008-03-21
D
BSP318S
140 °C
= f ( V
8
V
T
V
GS
j
GS
max
typ
min
200
10
)