BSP603S2L Infineon Technologies, BSP603S2L Datasheet - Page 4

• Manufacturer Part Number: BSP603S2L
• Description: MOSFET N-CH 55V 5.2A SOT-223
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSP603S2L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 2V @ 50µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP603S2LT; SP000013597; SP000431792

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f ( T
10
10
10
W
2.4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
2
1
0
2
1
0
10
0
BSP603S2L
BSP603S2L
DS
-1
C
20
)
)
40
10
60
0
C
= --
80
100
10
1
120
DC
°C
V
T
V
t p = 160.0µs
C
DS
1 ms
10 ms
160
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f ( T
K/W
10
10
10
10
10
10
10
4.5
3.5
2.5
1.5
0.5
A
= f ( t
-1
-2
-3
-4
6
5
4
3
2
1
0
2
1
0
10
0
C
BSP603S2L
BSP603S2L
-6
)
p
20
10
)
single pulse
-5
GS
40
10


p
-4
10 V
/ T
60
10
-3
80
10
-2
100
10
BSP603S2L
-1
2002-06-11
120
10
D = 0.50
0
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
s
C
160
10
2