BSP603S2L Infineon Technologies, BSP603S2L Datasheet - Page 6

• Manufacturer Part Number: BSP603S2L
• Description: MOSFET N-CH 55V 5.2A SOT-223
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSP603S2L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 2V @ 50µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP603S2LT; SP000013597; SP000431792

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
100


10
10
10
10
80
70
60
50
40
30
20
10
0
-60
4
3
2
1
0
BSP603S2L
DS
= f (T
)
-20
D
5
j
GS
)
= 2.6 A, V
=0V, f=1 MHz
20
10
98%
typ
60
15
GS
= 10 V
100
20
C
C
C
oss
rss
iss
°C
V
T
V
j
DS
180
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.5
V
1.5
0.5
A
1
0
-60
-1
2
1
0
0
= f (T j )
BSP603S2L
SD
)
0.4
-20
GS
0.8
p
= V
50
= 80 µs
20
DS

1.2
A
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
250
1.6
60

A
BSP603S2L
2
100
2002-06-11
2.4
°C
V
T
V
j
SD
160
3