BSP613P Infineon Technologies, BSP613P Datasheet - Page 3

MOSFET P-CH 60V 2.9A SOT-223

BSP613P

Manufacturer Part Number
BSP613P
Description
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSP613P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP613PT
SP000012301

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Rev.2.4
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
j
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
|V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
A
GS
DD
DD
DD
GS
DD
GS
R
F
DS
=2.9A
=2.9A, R
=25°C
/dt=100A/µs
=-30V, |I
Page 3
=0, V
=0 to -10V
=0V, |I
=-30V, V
=-48V, I
=-48V, I
=-48V, I
| 2*|I
Conditions
D
DS
G
F
|*R
F
| = |I
=2.7
=-25V,
D
D
D
| = |I
GS
=2.9A
=2.9A,
=2.9A
DS(on)max
=-10V,
S
S
|
|,
,
min.
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
37.2
59.8
typ.
715
230
-3.9
5.4
6.7
2.5
8.9
-0.8
90
26
22
9
7
-
-
2007-02-08
BSP613P
max.
-11.6
14.3
-2.9
875
295
120
112
3.8
-1.1
17
18
52
19
33
79
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC

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