BSP613P Infineon Technologies, BSP613P Datasheet - Page 5

• Manufacturer Part Number: BSP613P
• Description: MOSFET P-CH 60V 2.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP613P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP613PT; SP000012301

5 Typ. output characteristic
I
parameter: T j =25°C
7 Typ. transfer characteristics
I
parameter: T j = 25 °C
D
D
Rev.2.4
= f ( V
= f (V
5.5
4.5
3.5
2.5
1.5
0.5
A
A
7
6
5
4
3
2
1
0
8
6
5
4
3
2
1
0
0
0
DS
GS
0.5
)
); |V
Vgs = 10V
1
Vgs = 6V
1
DS |
1.5
2
2 x |I
Vgs = 5V
2
3
2.5
D |
x R
Vgs=3.5V
4
3
DS(on)max
3.5
Vgs = 4.5V
Vgs = 4V
5
4
V
-VDS
-V GS
V
7
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: T j = 25 °C
fs
DS(on)
= f(I
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
S
0
8
6
5
4
3
2
1
0
0
0
D
Vgs = 4V
= f (I
)
1
D
1
GS
)
2
; T j = 25 °C
3
2
Vgs = 4,5V
4
5
3
6
Vgs = 10V
4
7
2007-02-08
Vgs = 6V
Vgs = 5V
BSP613P
8
A
-I D
A
-I D
10
6