BSP89 E6327 Infineon Technologies, BSP89 E6327 Datasheet - Page 3

• Manufacturer Part Number: BSP89 E6327
• Description: MOSFET N-CH 240V 350MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP89 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP89E6327T; SP000011160

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
g
C
C
C
t
t
t
t
I
V
t
Q
j
Q
Q
Q
V
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
SD
iss
oss
rss
rr
(plateau) V
gs
gd
g
Rev. 2.1
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
A
DS
GS
DD
GS
R
F
DD
DD
GS
DD
=0.28A
=0.35A, R
=25°C
=120V, I
/dt=100A/µs
³2*I
=0, V
=120V, V
=0, I
=192V, I
=192V, I
=0 to 10V
=192V, I
Conditions
D
F
DS
*R
= I
F =
DS(on)max
G
=25V,
D
D
D
S
=6W
GS
l
S
=0.35A
=0.35A,
= 0.35 A
,
=10V,
,
min.
0.18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.36
11.2
15.9
18.4
0.85
typ.
123
5.2
3.5
80
0.2
4.3
3.1
67
4
2
-
-
2009-08-18
max.
16.8
23.8
27.6
0.35
140
100
184
7.8
5.3
1.4
1.2
0.3
6.4
6
-
3
-
BSP89
Unit
S
pF
ns
A
V
ns
nC
nC
V