BSP89 E6327 Infineon Technologies, BSP89 E6327 Datasheet - Page 7

• Manufacturer Part Number: BSP89 E6327
• Description: MOSFET N-CH 240V 350MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP89 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP89E6327T; SP000011160

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP89
0.2 V
0.5 V
0.8 V
I
D
G
DS max
DS max
DS max
= 0.35 A pulsed, T
1
); parameter: V
2
3
4
DS
j
= 25 °C
,
5
nC
Q
Rev. 2.1
G
6.5
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
291
276
271
266
261
256
251
246
241
236
231
226
221
216
V
-60
BSP89
= f (T
-20
j
)
20
60
100
2009-08-18
°C
BSP89
T
j
180