BSS123 E6433 Infineon Technologies, BSS123 E6433 Datasheet - Page 6

• Manufacturer Part Number: BSS123 E6433
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS123 E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.67nC @ 10V
• Input Capacitance (ciss) @ Vds: 69pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123E6433XT; SP000011166

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
DS(on)
pF
10
10
10
10
24
20
18
16
14
12
10
8
6
4
2
0
-60
3
2
1
0
0
BSS123
DS
= f (T
)
4
-20
D
GS
j
)
8
= 0.17 A, V
=0, f=1 MHz, T
20
12
98%
16
typ
60
20
GS
100
= 10 V
24
j
= 25 °C
28
°C
C
C
T
C
V
V
oss
Rev. 1.41
rss
j
iss
DS
180
36
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
V
A
-1
-2
-3
1
0
-60
0
0
BSS123
= f (T j )
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
I
D
1.6
60
typ.
2%
98%
=50µA
2
100
2010-05-12
2.4
BSS123
°C
T
V
V
j
SD
160
3