BSS123 E6433 Infineon Technologies, BSS123 E6433 Datasheet - Page 7

• Manufacturer Part Number: BSS123 E6433
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS123 E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.67nC @ 10V
• Input Capacitance (ciss) @ Vds: 69pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123E6433XT; SP000011166

13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSS123
0.2 V
0.5 V
0.8 V
I
D
G
0.4
DS max
DS max
DS max
= 0.17 A pulsed, T
); parameter: V
0.8
1.2
1.6
DS
j
2
= 25 °C
,
nC
Q
Rev. 1.41
G
2.8
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
120
114
112
110
108
106
104
102
100
V
98
96
94
92
90
-60
BSS123
= f ( T
-20
j
)
20
60
100
2010-05-12
BSS123
°C
T
j
180