BUZ73 E3046 Infineon Technologies, BUZ73 E3046 Datasheet - Page 2

• Manufacturer Part Number: BUZ73 E3046
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73 E3046

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ73E3046X; BUZ73E3046XK; SP000011963

Electrical Characteristics, at T
Rev. 2.3
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-resistance
V
GS
GS =
DS
DS
GS
GS
= 0 V, I
= 200 V, V
= 200 V, V
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 1 mA
D
= 0.25 mA, T
DS
GS
GS
= 4.5 A
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 25 ˚C
j
= 25˚C, unless otherwise specified
Symbol
V
V
I
I
R
DSS
GSS
Page 2
GS(th)
DS(on)
(BR)DSS
-
-
min.
-
-
200
2.1
Values
typ.
-
10
0.3
0.1
10
3
max.
-
4
1
100
100
0.4
BUZ 73
2009-03-25
Ω
V
µA
nA
Unit