SPB21N10 G Infineon Technologies, SPB21N10 G Datasheet - Page 3
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SPB21N10 G
Manufacturer Part Number
SPB21N10 G
Description
MOSFET N-CH 100V 21A D2PAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPB21N10_G.pdf
(8 pages)
Specifications of SPB21N10 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 44µA
Gate Charge (qg) @ Vgs
38.4nC @ 10V
Input Capacitance (ciss) @ Vds
865pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000102171
SPB21N10GXT
SPB21N10GXT
Rev 2.2
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=15.0A
=21A, R
=25°C
=50V, I
/dt=100A/µs
=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
2 *I
D
*R
F =
G
F
DS
D
D
D
=21A
=13
DS(on)max
GS
l
S
=21A
=21A,
=21A
=25V,
,
=10V,
,
min.
6.5
SPP21N10,SPB21N10 G
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
12.4
15.5
28.9
0.94
typ.
650
140
153
3.9
6.2
80
10
56
37
23
65
-
-
2006-11-14
max.
23.3
38.4
1.25 V
81.5 ns
865
186
120
192
5.2
15
84
55
35
21
84
SPI21N10
-
-
Unit
S
pF
ns
nC
V
A
nC