SPB21N10 G Infineon Technologies, SPB21N10 G Datasheet - Page 5
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SPB21N10 G
Manufacturer Part Number
SPB21N10 G
Description
MOSFET N-CH 100V 21A D2PAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPB21N10_G.pdf
(8 pages)
Specifications of SPB21N10 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 44µA
Gate Charge (qg) @ Vgs
38.4nC @ 10V
Input Capacitance (ciss) @ Vds
865pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000102171
SPB21N10GXT
SPB21N10GXT
5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f ( V
A
A
50
30
20
10
30
20
15
10
0
5
0
0
2
Rev 2.2
DS
GS
); T
e
); V
p
p
3
= 80 µs
= 80 µs
j
DS
=25°C
5
4
2 x I
D
10
5
x R
DS(on)max
6
V
d
c
b
a
V GS [V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
V
V
V
DS
GS
20
8
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f( I
260
220
200
180
160
140
120
100
S
80
60
40
20
14
12
11
10
0
9
8
7
6
5
4
3
2
1
0
0
0
D
= f ( I
); T
5
j
V GS [V]=
a= 5.6
b= 6.0
=25°C
D
4
fs
GS
10
)
a
15
8
b
SPP21N10,SPB21N10 G
20
c= 7.0
d= 8.0
e= 10.0
25
12
30
c
16
35
2006-11-14
SPI21N10
40
A
I
I
A
D
D
e
d
24
50