SPB70N10L Infineon Technologies, SPB70N10L Datasheet - Page 3
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SPB70N10L
Manufacturer Part Number
SPB70N10L
Description
MOSFET N-CH 100V 70A D2PAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPB70N10L.pdf
(8 pages)
Specifications of SPB70N10L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
2V @ 2mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
4540pF @ 25V
Power - Max
250W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000012079
SPB70N10LT
SPB70N10LT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB70N10L
Manufacturer:
INF
Quantity:
305
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
j
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=50A
=70A, R
=25°C
=50V, I
/dt=100A/µs
=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
2*I
Conditions
D
*R
F =
G
F
DS
D
D
D
=140A
=1.3
DS(on)max
GS
l
S
=70A
=70A,
=70A
=25V,
,
=4.5V,
,
min.
30
SPP70N10L,SPB70N10L
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3630
3.22
typ.
640
345
250
250
160
100
600
1.2
65
70
95
10
34
-
-
2005-01-12
SPI70N10L
max.
4540
800
430
105
375
375
145
240
280
150
900
1.8
15
51
70
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC