SPB70N10L Infineon Technologies, SPB70N10L Datasheet - Page 5

• Manufacturer Part Number: SPB70N10L
• Description: MOSFET N-CH 100V 70A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB70N10L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2V @ 2mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012079; SPB70N10LT

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
170
140
120
100
A
A
80
60
40
20
70
60
55
50
45
40
35
30
25
20
15
10
0
5
0
0
0
DS
SPP70N10L
GS
P
tot
0.5
); T
); V
= 250W
p
p
1
= 80 µs
= 80 µs
1
j
DS
=25°C
l
1.5
k
j
i
h
2 x I
g
2
f
2
D
2.5
e
x R
3
3
DS(on)max
3.5
c
a
4
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
4
V
V
V
V
GS
DS
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
5.5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f(I
S
80
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
0
5
0
0
0
D
SPP70N10L
= f (I
V
); T
GS
3.0
b
[V] =
j
3.5
20
c
=25°C
D
fs
GS
10
)
4.0
d
b
40
4.5
e
SPP70N10L,SPB70N10L
20
5.0
f
60
5.5
g
30
6.0
c
h
80
6.5
i
2005-01-12
40
SPI70N10L
7.0
j
100
8.0
k
A
A
d
I
I
k
D
D
10.0
g
l
i
e
l
h
j
f
130
55