SPB80N06S2-H5 Infineon Technologies, SPB80N06S2-H5 Datasheet - Page 4
![MOSFET N-CH 55V 80A D2PAK](/photos/5/61/56121/448-d2pak_sml.jpg)
SPB80N06S2-H5
Manufacturer Part Number
SPB80N06S2-H5
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2-H5.pdf
(8 pages)
Specifications of SPB80N06S2-H5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 230µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013795
SPB80N06S2H5T
SPB80N06S2H5T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB80N06S2-H5
Manufacturer:
ST
Quantity:
6 700
1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
320
240
200
160
120
W
A
80
40
0
3
2
1
0
10
0
SPP80N06S2-H5
SPP80N06S2-H5
DS
-1
C
20
)
)
GS
40
≥ 6 V
60
10
0
C
80
= 25 °C
100 120 140 160
10
1
V
T
V
t
p
°C
C
= 10.0µs
DS
100 µs
1 ms
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
90
70
60
50
40
30
20
10
0
= f (t
-1
-2
-3
-4
0
1
0
10
C
SPP80N06S2-H5
SPP80N06S2-H5
)
-7
20
p
)
10
single pulse
GS
40
-6
≥ 10 V
10
p
60
/T
-5
80
10
SPB80N06S2-H5
-4
SPP80N06S2-H5
100 120 140 160
10
-3
10
2003-05-09
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0