SPB80N06S2-H5 Infineon Technologies, SPB80N06S2-H5 Datasheet - Page 7
![MOSFET N-CH 55V 80A D2PAK](/photos/5/61/56121/448-d2pak_sml.jpg)
SPB80N06S2-H5
Manufacturer Part Number
SPB80N06S2-H5
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2-H5.pdf
(8 pages)
Specifications of SPB80N06S2-H5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 230µA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013795
SPB80N06S2H5T
SPB80N06S2H5T
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB80N06S2-H5
Manufacturer:
ST
Quantity:
6 700
15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
700
500
400
300
200
100
= f (T
V
66
62
60
58
56
54
52
50
D
-60
0
25
= 80 A , V
SPP80N06S2-H5
= f (T
j
)
-20
D
50
=10 mA
j
)
20
DD
75
= 25 V, R
60
100
100
125
GS
140
= 25 Ω
°C
°C
T
T
j
j
200
175
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N06S2-H5
Gate
20
D
= 80 A pulsed
)
40
60
0,2
SPB80N06S2-H5
SPP80N06S2-H5
80
V
DS max
100
2003-05-09
120
0,8 V
nC
DS max
Q
Gate
160