SPI80N08S2-07R Infineon Technologies, SPI80N08S2-07R Datasheet

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SPI80N08S2-07R

Manufacturer Part Number
SPI80N08S2-07R
Description
MOSFET N-CH 75V 80A I2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPI80N08S2-07R

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.3 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
5830pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013717
SPI80N08S207R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPI80N08S2-07R
Manufacturer:
INFINEON
Quantity:
12 500
OptiMOS
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
• Integrated gate resistance
Type
SPI80N08S2-07R
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
for easy parallel connection
C
C
C
=80A, V
=80 A , V
=25°C
=25°C
=25°C
DS
DD
=60V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
P- TO262 -3-1
=25Ω
1)
j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
Q67060-S7417
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
Marking
RN0807
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
320
750
300
SPI80N08S2-07R
80
80
30
6
P- TO262 -3-1
2003-05-09
7.3
75
80
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for SPI80N08S2-07R

SPI80N08S2-07R Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ordering Code Q67060-S7417 Symbol puls jmax dv/dt =175°C jmax tot stg Page 1 SPI80N08S2-07R Product Summary 7.3 DS(on TO262 -3-1 Marking RN0807 Value 80 80 320 750 30 6 ±20 300 -55... +175 55/175/56 2003-05-09 V mΩ ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 0.5K/W the chip is able to carry I thJC Page 2 SPI80N08S2-07R Values Unit min. typ. max. - 0.32 0.5 K Values Unit min. typ. max ...

Page 3

... G d(off =60V, I =80A =60V, I =80A 10V GS V (plateau) V =60V, I =80A =25° =0V, I =80A =40V /dt=100A/µ Page 3 SPI80N08S2-07R Values Unit min. typ. max. 52 104 - 4380 5830 pF - 970 1290 - 390 590 Ω 5 130 - 117 175 - 86 129 - 138 185 - 4 320 - ...

Page 4

... Safe operating area parameter : °C C SPI80N08S2-07R Drain current parameter: V SPI80N08S2-07R °C 190 Max. transient thermal impedance thJC parameter : K 27.0µ 100 µ Page 4 SPI80N08S2-07R ) ≥ 100 120 140 160 ) SPI80N08S2-07R D = 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... A 120 100 Typ. drain-source on resistance R DS(on) parameter Ω [ 4 4 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 120 Page 5 SPI80N08S2-07R = SPI80N08S2-07R [ 4.4 4.6 4.8 5.0 5.2 5.4 10 100 ); T =25° 100 2003-05- 120 150 140 I D ...

Page 6

... Forward character. of reverse diode parameter iss 10 C oss C rss Page 6 SPI80N08S2-07R = 1. 250 µA 2 -60 - 100 ) µs p SPI80N08S2-07R °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 2003-05-09 °C 180 2 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j parameter SPI80N08S2-07R -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N08S2-07R ) Gate = 80 A pulsed D SPI80N08S2-07R 0 max 0 100 120 140 160 2003-05-09 DS max 200 nC Q Gate ...

Page 8

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPI80N08S2-07R, for simplicity the device is referred to by the term SPI80N08S2-07R throughout this documentation. Page 8 ...

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