SPI80N08S2-07R Infineon Technologies, SPI80N08S2-07R Datasheet - Page 5

• Manufacturer Part Number: SPI80N08S2-07R
• Description: MOSFET N-CH 75V 80A I2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPI80N08S2-07R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 5830pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013717; SPI80N08S207R

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPI80N08S2-07R
GS
P
tot
); T
); V
= 300W
p
p
1
1
i
= 80 µs
= 80 µs
j
=25°C
DS
≥ 2 x I
2
2
D
3
3
x R
DS(on)max
4
4
g
e
c
a
5
h
f
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
V
V
V
V
DS
GS
10.0
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
6.5
6
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
120
Ω
S
24
20
18
16
14
12
10
80
60
40
20
8
6
4
2
0
0
0
0
D
SPI80N08S2-07R
= f (I
V
); T
GS
4.4
c
[V] =
20
20
c
j
4.6
d
=25°C
D
fs
GS
)
4.8
e
40
40
d
5.0
f
60
g
5.2
60
e
SPI80N08S2-07R
5.4
h
80
10.0
f
80
i
100
100
g
2003-05-09
120
h
A
i
I
A
D
I
D
150
140