SPP80N08S2-07 Infineon Technologies, SPP80N08S2-07 Datasheet
SPP80N08S2-07
Specifications of SPP80N08S2-07
SPP80N08S207
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SPP80N08S2-07 Summary of contents
Page 1
... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =60V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N08S2-07,SPB80N08S2-07 Product Summary DS(on TO262 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4263 Q67040-S4264 Q67060-S6082 ...
Page 2
... PCB is vertical without blown air. 4 Diagrams are related to straight lead versions Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R 4) DS(on) = 0.5K/W the chip is able to carry I thJC Page 2 SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 Values min. typ. max. - 0.3 0 Values min. typ. max 2 0.01 ...
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... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N08S2-07,SPB80N08S2-07 Symbol Conditions ≥2 DS(on)max I ...
Page 4
... D DS parameter : °C C SPP80N08S2- Drain current parameter: V SPP80N08S2- °C 190 Max. transient thermal impedance thJC parameter : K 3.7µ µ 100 µ Page 4 SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 ) ≥ 100 120 140 160 ) SPP80N08S2- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 5
... Typ. drain-source on resistance R DS(on) parameter Ω [V] a 4 5 5.8 f 6.0 g 6 6 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 120 100 Page 5 SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2- SPP80N08S2- [ 5.5 5.8 6.0 6.3 6.5 6.8 10 100 120 ); T =25° 2003-05-09 ...
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... Typ. gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss oss 10 rss Page 6 SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2- 1. 250 µ -60 - 100 ) µs p SPP80N08S2- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 2003-05-09 °C 180 2 ...
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... Drain-source breakdown voltage (BR)DSS j parameter SPP80N08S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 ) Gate = 80 A pulsed D SPP80N08S2-07 0 max 100 120 140 160 2003-05-09 0 max 190 nC Q Gate ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N08S2-07 and BSPB80N08S2-07, for simplicity the device is referred to by the term SPP80N08S2-07 and SPB80N08S2-07 throughout this documentation. SPP80N08S2-07,SPB80N08S2-07 ...