SPP80N08S2-07 Infineon Technologies, SPP80N08S2-07 Datasheet - Page 5

• Manufacturer Part Number: SPP80N08S2-07
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPP80N08S2-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.4 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 6130pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012475; SPP80N08S207

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N08S2-07
GS
P
0.5
tot
); T
); V
= 300W
1
p
p
= 80 µs
= 80 µs
j
1
j
=25°C
DS
i
1.5
2
≥ 2 x I
2
3
D
2.5
x R
4
3
DS(on)max
3.5
5
g
e
c
a
f
d
h
b
V GS [V]
4
V
a
b
c
d
e
f
g
h
i
j
GS
V
V
V
DS
10.0
4.5
5.0
5.3
5.5
5.8
6.0
6.3
6.5
6.8
7
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
120
100
S
26
22
20
18
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0
0
D
SPP80N08S2-07
SPP80N08S2-07,SPB80N08S2-07
= f (I
V
); T
GS
5.5
d
[V] =
20
j
5.8
e
=25°C
20
D
fs
GS
d
)
6.0
f
40
g
6.3
40
60
6.5
h
e
6.8
80
i
60
f
10.0
j
SPI80N08S2-07
100
80
2003-05-09
120
g
A
A
I
h
D
I
D
i
160
j
120