SPD02N80C3 Infineon Technologies, SPD02N80C3 Datasheet

SPD02N80C3

Manufacturer Part Number

SPD02N80C3

Description

MOSFET N-CH 800V 2A TO-252

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Datasheets

1.SPD02N80C3.pdf (10 pages)

2.SPD02N80C3.pdf (11 pages)

Specifications of SPD02N80C3

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2.7 Ohm @ 1.2A, 10V

Drain To Source Voltage (vdss)

800V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3.9V @ 120µA

Gate Charge (qg) @ Vgs

16nC @ 10V

Input Capacitance (ciss) @ Vds

290pF @ 100V

Power - Max

42W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.7 Ohm @ 10 V

Drain-source Breakdown Voltage

800 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2 A

Power Dissipation

42000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Continuous Drain Current Id

Drain Source Voltage Vds

800V

On Resistance Rds(on)

2.7ohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000014822
SP000315409
SPD02N80C3
SPD02N80C3INTR
SPD02N80C3XT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPD02N80C3

Manufacturer:

Infineon Technologies

Quantity:

34 817

Company:

Meier Automation Equipment Co., Limited

Part Number:

SPD02N80C3

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SPD02N80C3

Company:

H&T Electronics

Part Number:

SPD02N80C3

Quantity:

2 500

Current page: 1 of 11
Download datasheet (589Kb)

Gate source voltage

Rev. 2.5

jmax

Page

jmax

tot

2008-04-11

Related parts for SPD02N80C3

SPD02N80C3 Summary of contents

Page 1

Gate source voltage Rev. 2.5 T jmax jmax T jmax tot Page 2008-04-11 ...

Page 2

reflow soldering, MSL3 Rev. 2.5 R thJC V (BR)DSS ...

Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate to source charge Gate to drain charge Rev. 2 iss GS DS ...

Page 4

Inverse diode direct current, pulsed Reverse recovery time Reverse recovery charge Peak reverse recovery current Rev rrm 2008-04-11 ...

Page 5

Rev. 2 2008-04-11 ...

Page 6

Rev. 2 2008-04-11 ...

Page 7

max V DS max Rev. 2 2008-04-11 ...

Page 8

(BR)DSS j Rev. 2 2008-04-11 ...

Page 9

iss C oss C rss Rev. 2.5 C oss 2008-04-11 ...

Page 10

PG-TO252-3-11, PG-TO252-3-21 G Rev. 2.5 2008-04-11 ...

Page 11

Rev. 2.5 2008-04-11 ...

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