NTD60N02R-35G ON Semiconductor, NTD60N02R-35G Datasheet - Page 4

• Manufacturer Part Number: NTD60N02R-35G
• Description: MOSFET N-CH 25V 8.5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD60N02R-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1330pF @ 20V
• Power - Max: 1.25W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
2000
1500
1000
100
500
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
10
0
1
10
1
C
V
I
V
Figure 9. Resistive Switching Time Variation
C
D
iss
t
DD
GS
d(off)
V
rss
= 31 A
DS
= 10 V
= 10 V
5
= 0 V
Figure 7. Capacitance Variation
V
R
GS
versus Gate Resistance
G
, GATE RESISTANCE (W)
0
V
Figure 11. Maximum Rated Forward Biased Safe Operating Area
DS
V
GS
100
10
5
10
t
1
= 0 V
d(on)
t
t
0.1
r
f
V
SINGLE PULSE
T
C
GS
C
oss
= 25°C
10
= 20 V
C
V
R
THERMAL LIMIT
PACKAGE LIMIT
iss
DS
C
DS(ON)
rss
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
15
= 25°C
LIMIT
http://onsemi.com
1
NTD60N02R
100
20
4
5
4
3
2
1
0
0
Figure 8. Gate−to−Source and Drain−to−Source
80
70
60
50
40
30
20
10
V
0
0.2
DS
Q
10
GS
V
T
GS
J
Figure 10. Diode Forward Voltage versus
0.4
= 25°C
2
V
Voltage versus Total Charge
Q
= 0 V
SD
100 ms
10 ms
10 ms
g
1 ms
dc
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
0.6
4
100
0.8
Q
Q
DS
T
Current
1.0
6
1.2
V
GS
8
T
I
1.4
D
J
= 25°C
= 31 A
1.6
10
20
16
12
8
0
4
1.8