NTY100N10G ON Semiconductor, NTY100N10G Datasheet - Page 7

• Manufacturer Part Number: NTY100N10G
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
1.0E−05
1
SINGLE PULSE
D = 0.5
0.2
0.1
0.01
1.0E−04
0.02
0.05
Figure 14. Diode Reverse Recovery Waveform
I
S
1.0E−03
Figure 13. Thermal Response
SAFE OPERATING AREA
t
p
http://onsemi.com
di/
dt
t
a
t, TIME (s)
1.0E−02
7
t
rr
P
(pk)
t
b
I
S
DUTY CYCLE, D = t
0.25 I
t
1
t
S
2
1.0E−01
1
/t
TIME
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
C
= P
1.0E+00
qJC
(pk)
1
R
qJC
(t)
1.0E+01