NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet - Page 3

• Manufacturer Part Number: NTB25P06T4G
• Description: MOSFET P-CH 60V 27.5A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB25P06T4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 25 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.082Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB25P06T4GOS; NTB25P06T4GOS; NTB25P06T4GOSTR

0.15
0.05
1.75
1.25
0.75
50
45
40
35
30
25
20
15
10
0.2
0.1
1.5
0.5
5
0
0
1
0
−50
0
Figure 3. On−Resistance vs. Drain Current and
V
−V
I
V
GS
D
GS
−25
Figure 5. On−Resistance Variation with
DS
= −25 A
Figure 1. On−Region Characteristics
= −10 V
= −10 V
−9 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
2
10
V
J
GS
, JUNCTION TEMPERATURE (°C)
−I
0
= −10 V
D
, DRAIN CURRENT (AMPS)
25
Temperature
Temperature
4
20
T
T
T
J
J
J
= −55°C
= 125°C
= 25°C
50
−8 V
6
30
75
100
T
8
40
J
= 25°C
−7 V
−4.5 V
−5.5 V
−4.2 V
125
http://onsemi.com
−6 V
−5 V
NTB25P06
10
150
50
3
10000
0.095
0.085
0.075
0.065
1000
100
50
40
30
20
10
10
0
10
0
2
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
T
GS
−V
DS
J
−V
= 25°C
DS
= 0 V
≥ 10 V
GS
10
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
20
D
V
, DRAIN CURRENT (AMPS)
GS
20
4
= −10 V
Gate Voltage
vs. Voltage
T
T
V
J
J
GS
= 150°C
= 125°C
T
30
30
J
= −15 V
= −55°C
T
J
= 25°C
40
6
40
T
J
50
= 125°C
50
60
8