NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet - Page 6

• Manufacturer Part Number: NTB25P06T4G
• Description: MOSFET P-CH 60V 27.5A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB25P06T4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 25 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.082Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB25P06T4GOS; NTB25P06T4GOS; NTB25P06T4GOSTR

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