NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet - Page 5

• Manufacturer Part Number: NTB25P06T4G
• Description: MOSFET P-CH 60V 27.5A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB25P06T4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 25 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.082Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB25P06T4GOS; NTB25P06T4GOS; NTB25P06T4GOSTR

VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
SEATING
PLANE
−T−
F
1
1
G
−B−
4
2
L
3
D
0.13 (0.005)
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
3 PL
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
S
R
VIEW W−W
M
F
T
2
PACKAGE DIMENSIONS
B
8.38
0.33
SOLDERING FOOTPRINT*
M
N
K
http://onsemi.com
CASE 418B−04
L
NTB25P06
C
17.02
ISSUE J
0.67
H
D
2
PAK
5
A
E
M
J
U
V
W
W
VIEW W−W
3.05
0.12
F
3
SCALE 3:1
1.016
0.04
P
L
inches
5.08
0.20
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
DIM
A
B
C
D
G
H
K
M
N
R
E
F
J
L
P
S
V
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.110
0.025
0.110
0.072
0.320
0.625
0.055
MAX
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
7.11
1.14
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40