BAR 81W E6327 Infineon Technologies, BAR 81W E6327 Datasheet
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Manufacturer Part Number
BAR 81W E6327
Description
DIODE RF SGL 30V 100MA SOT-343
Manufacturer
Infineon Technologies
Specifications of BAR 81W E6327
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Diode Type
Standard - Single
Voltage - Peak Reverse (max)
30V
Current - Max
100mA
Capacitance @ Vr, F
0.9pF @ 3V, 1MHz
Resistance @ If, F
1 Ohm @ 5mA, 100MHz
Power Dissipation (max)
100mW
Configuration
Single Dual Anode Dual Cathode
Reverse Voltage
30 V
Forward Continuous Current
100 mA
Carrier Life
0.08 us
Forward Voltage Drop
1 V
Maximum Diode Capacitance
0.9 pF at 3 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1 Ohms at 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR 81W E6327 BAR81WE6327INTR BAR81WE6327XT SP000010192
BAR81W
BAR81W
Junction - soldering point
1
2
Silicon RF Switching Diode
Type
* series inductance chip to ground
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Pb-containing package may be available upon special request
For calculation of R
Pb-free (RoHS compliant) package
Qualified according AEC Q101
s
Designed for use in shunt configuration in
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation
high performance RF switches
using
138°C
lines
thJA
please refer to Application Note Thermal Resistance
A
2)
= 25°C, unless otherwise specified
SOT343
Package
1)
Configuration
single shunt-diode
1
Symbol
V
I
P
T
T
T
Symbol
R
F
j
op
stg
R
tot
thJS
-55 ... 125
-55 ... 150
Value
Value
100
100
150
30
120
L
0.15*
S
(nH)
2007-04-19
BAR81...
Marking
BBs
V
mA
mW
°C
K/W
Unit
Unit
Related parts for BAR 81W E6327
BAR 81W E6327 Summary of contents
Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR81W ...
Electrical Characteristics at T Parameter DC Characteristics Reverse current Forward voltage I = 100 Characteristics Diode capacitance MHz ...
Diode capacitance Parameter 1 pF 0.8 0.7 0.6 1 Mhz ... 1.8 GHz 0.5 0.4 0.3 0 Forward resistance 100MHz 1 10 ...
Forward current BAR81W 120 mA 100 Permissible Pulse Load BAR81W Fmax FDC p ...
Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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