BAR 90-081LS E6327 Infineon Technologies, BAR 90-081LS E6327 Datasheet

BAR 90-081LS E6327

Manufacturer Part Number

BAR 90-081LS E6327

Description

DIODE ARRAY 80V 100MA TSSLP-8

Manufacturer

Infineon Technologies

Datasheet

1.BAR_90-081LS_E6327.pdf (8 pages)

Specifications of BAR 90-081LS E6327

Diode Type

PIN - 4 Independent

Voltage - Peak Reverse (max)

80V

Current - Max

100mA

Capacitance @ Vr, F

0.35pF @ 1V, 1MHz

Resistance @ If, F

800 mOhm @ 10mA, 100MHz

Power Dissipation (max)

150mW

Package / Case

8-TSSLP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SP000435922

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Silicon Trench PIN Diode Array

• Optimized for low bias current antenna

• Very low capacitance at zero volt

• Low forward resistance

• Improved ON / OFF mode harmonic

• Very small form factor: 1.34 x 0.74 x 0.31 mm³

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAR90-081LS

Type

BAR90-081LS

Maximum Ratings at T

Parameter

Diode reverse voltage

Forward current

Total power dissipation

Junction temperature

Operating temperature range

Storage temperature

switches in hand held applications

reverse bias at frequencies

above 1GHz (typ. 0.19 pF)

(typ. 1.3 Ω @ I

distortion balance

≤ 137 °C

= 3 mA)

= 25°C, unless otherwise specified

Package

TSSLP-8-1

Configuration

quad array

Symbol

stg

tot

-55 ... 125

-55 ... 150

Value

100

150

0.2

(nH)

BAR90-081LS

2009-01-26

Marking

Unit

°C

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BAR 90-081LS E6327 Summary of contents

Page 1

Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage 100 mA ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...

Page 4

Diode capacitance Parameter 0.5 pF 0.4 0.35 1 MHz 0.3 100 MHz 1 GHz 1.8 GHz 0.25 0.2 0.15 0 ƒ (I Forward resistance r f ...

Page 5

Forward current 120 mA 100 Permissible Puls Load R thJS 0,5 0,2 ...

Page 6

Insertion loss | Parameter F Single BAR90 diode in series configuration Ω -0.1 -0.15 -0.2 10mA -0.25 3mA 1mA 0.5mA -0.3 -0.35 -0 ...

Page 7

Package TSSLP-8-1 7 BAR90-081LS 2009-01-26 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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