BAP55LX,315 NXP Semiconductors, BAP55LX,315 Datasheet - Page 3

• Manufacturer Part Number: BAP55LX,315
• Description: DIODE SILICON PIN SOD-882T
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP55LX,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
• Resistance @ If, F: 800 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 135mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.28 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.8 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 4.5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 135 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061239315; BAP55LX T/R; BAP55LX T/R

NXP Semiconductors
Table 6.
T
BAP55LX
Product data sheet
Symbol
ISL
L
L
L
L
τ
L
amb
L
ins
ins
ins
ins
S
= 25
°
C unless otherwise specified.
Characteristics
Parameter
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
Fig 1.
…continued
V
Diode capacitance as a function of frequency; typical values
R
= 0 V; T
Conditions
see
when switched from I
I
I
I
see
see
see
see
R
R
F
All information provided in this document is subject to legal disclaimers.
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 3 mA
Figure
Figure
Figure
Figure
Figure
j
= 25 °C.
(pF)
C
Rev. 3 — 13 January 2011
d
0.5
0.4
0.3
0.2
0.1
4; V
5; I
5; I
5; I
5; I
0
L
0
= 100 Ω; measured at
F
F
F
F
R
= 0.5 mA;
= 1 mA;
= 10 mA;
= 100 mA;
= 0 V;
F
1000
= 10 mA to
2000
3000
f (MHz)
001aan470
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.225
-
4000
Typ
19
14
12
0.24
0.25
0.26
0.17
0.18
0.19
0.08
0.09
0.10
0.05
0.07
0.08
0.27
0.4
BAP55LX
Silicon PIN diode
© NXP B.V. 2011. All rights reserved.
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
μs
nH
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