BAP55LX,315 NXP Semiconductors, BAP55LX,315 Datasheet - Page 4

• Manufacturer Part Number: BAP55LX,315
• Description: DIODE SILICON PIN SOD-882T
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP55LX,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
• Resistance @ If, F: 800 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 135mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.28 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.8 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 4.5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 135 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061239315; BAP55LX T/R; BAP55LX T/R

NXP Semiconductors
BAP55LX
Product data sheet
Fig 2. Diode capacitance as a function of reverse
Fig 4. Isolation of the diode as a function of
(dB)
(fF)
ISL
C
400
300
200
100
−10
−20
−30
−40
d
0
0
voltage; typical values
frequency; typical values
0
f = 1 MHz; T
0
T
Diode zero biased and inserted in series with a 50 Ω
stripline circuit
amb
= 25 °C
5
j
= 25 °C.
1000
10
2000
15
f (MHz)
All information provided in this document is subject to legal disclaimers.
001aag762
V
001aag764
R
(V)
3000
Rev. 3 — 13 January 2011
20
Fig 3. Forward resistance as a function of forward
Fig 5. Insertion loss of the diode as a function of
(dB)
L
(Ω)
r
10
(1) I
(2) I
(3) I
(4) I
ins
−0.2
−0.4
−0.6
−0.8
−1.0
D
10
10
−1
1
0
2
10
current; typical values
frequency; typical values
0
f = 100 MHz; T
T
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network
−1
F
F
F
F
amb
(3)
(4)
= 100 mA
= 10 mA
= 1 mA
= 0.5 mA
= 25 °C
1000
j
1
= 25 °C.
2000
10
BAP55LX
Silicon PIN diode
f (MHz)
© NXP B.V. 2011. All rights reserved.
I
f
(mA)
001aag763
001aag765
(1)
(2)
3000
10
2
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