BAT17,235 NXP Semiconductors, BAT17,235 Datasheet - Page 3
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BAT17,235
Manufacturer Part Number
BAT17,235
Description
DIODE SCHOTTKY 4V 30MA SOT-23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BAT17235.pdf
(7 pages)
Specifications of BAT17,235
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
4V
Current - Max
30mA
Capacitance @ Vr, F
1pF @ 0V, 1MHz
Resistance @ If, F
15 Ohm @ 5mA, 1kHz
Product
Schottky Diodes
Peak Reverse Voltage
4 V
Forward Continuous Current
0.03 A
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.25 uA
Operating Temperature Range
+ 100 C
Mounting Style
SMD/SMT
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933410700235
BAT17 /T3
BAT17 /T3
BAT17 /T3
BAT17 /T3
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise F
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
2003 Mar 25
V
I
r
C
F
R
SYMBOL
SYMBOL
amb
R
D
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
reverse current
diode forward resistance
diode capacitance
noise figure
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.2
V
V
f = 1 kHz; I
f = 1 MHz; V
f = 900 MHz; note 1
note 1
3
R
R
I
I
I
F
F
F
= 3 V; see Fig.3
= 3 V; T
= 0.1 mA
= 1 mA
= 10 mA
F
CONDITIONS
amb
CONDITIONS
R
= 5 mA
= 0; see Fig.4
= 60 °C; see Fig.3
if
= 1.5 dB; f = 35 MHz.
350
450
600
0.25
1.25
15
1
8
VALUE
MAX.
Product data sheet
500
BAT17
mV
mV
mV
μA
μA
Ω
pF
dB
UNIT
UNIT
K/W