BCV27T/R NXP Semiconductors, BCV27T/R Datasheet - Page 4

• Manufacturer Part Number: BCV27T/R
• Description: Trans Darlington NPN 30V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCV27T/R

• Package: 3TO-236AB
• Configuration: Single
• Peak Dc Collector Current: 0.5 A
• Maximum Base Emitter Saturation Voltage: 1.5@0.1mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 1@0.1mA@100mA V
• Maximum Collector Base Voltage: 40 V
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Collector Emitter Voltage: 30 V
• Minimum Dc Current Gain: 4000@1mA@5V|10000@10mA@5V|20000@100mA@5V

NXP Semiconductors
CHARACTERISTICS
T
2004 Jan 13
handbook, full pagewidth
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
NPN Darlington transistors
V
80000
60000
40000
20000
CE
h FE
= 25 °C unless otherwise specified.
= 2 V.
10
0
−1
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV27
BCV47
BCV27
BCV47
PARAMETER
1
Fig.2 DC current gain; typical values.
I
I
I
V
V
I
I
I
I
E
E
E
C
C
C
C
CE
CE
I
I
I
I
I
I
= 0; V
= 0; V
= 0; V
= 100 mA; I
= 100 mA; I
= 10 mA; V
= 30 mA; V
C
C
C
C
C
C
= 5 V; (see Fig.2)
= 5 V; (see Fig.2)
= 1 mA
= 10 mA
= 100 mA
= 1 mA
= 10 mA
= 100 mA
CBO
CBO
EB
4
10
CONDITIONS
= 10 V
= 30 V
= 60 V
CE
CE
B
B
= 0.1 mA
= 0.1 mA
= 5 V
= 5 V; f = 100 MHz −
10
2
−
−
−
4 000
1 0 000 −
2 0 000 −
2 000
4 000
10 000 −
−
−
−
MIN.
BCV27; BCV47
I C (mA)
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
100
100
100
−
−
−
−
−
−
1
1.5
1.4
−
MAX.
MGD837
10
3
nA
nA
nA
V
V
V
MHz
UNIT