BCR133E6327XT Infineon Technologies, BCR133E6327XT Datasheet - Page 4

• Manufacturer Part Number: BCR133E6327XT
• Description: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BCR133E6327XT

• Package: 3SOT-23
• Configuration: Single
• Minimum Dc Current Gain: 30@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 30
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
V
-1
3
2
1
0
2
1
0
10
10
-4
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-4
10
FE
i (on)
-3
-40 °C
-25 °C
25 °C
85 °C
125 °C
=
10
= ( I
( I
-3
C
)
C
10
)
-2
10
-2
A
I
I
C
C
A
10
10
-1
-1
4
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
0.35
0.25
0.15
0.05
10
10
0.5
0.4
0.3
0.2
0.1
= 5V (common emitter configuration)
V
V
-1
0
1
0
10
10
= ( I
-3
-5
-40 °C
-25 °C
25 °C
85 °C
125 °C
C
), I
10
C
-40 °C
-25 °C
25 °C
85 °C
125 °C
/I
-4
B
i(off)
= 20
10
10
=
-3
-2
( I
C
)
BCR133...
2007-09-17
10
A
-2
I
I
C
C
A
10
10
-1
-1