BCR133E6327XT Infineon Technologies, BCR133E6327XT Datasheet - Page 5

• Manufacturer Part Number: BCR133E6327XT
• Description: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BCR133E6327XT

• Package: 3SOT-23
• Configuration: Single
• Minimum Dc Current Gain: 30@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 30
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Total power dissipation P
BCR133
Total power dissipation P
BCR133S
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= ( T
= ( T
S
S
)
)
T
T
S
S
150
150
5
Total power dissipation P
BCR133F
Total power dissipation P
BCR133W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= ( T
= ( T
BCR133...
2007-09-17
S
S
)
)
T
T
S
S
150
150