BAR 90-081LS E6327 Infineon Technologies, BAR 90-081LS E6327 Datasheet - Page 3

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BAR 90-081LS E6327

Manufacturer Part Number
BAR 90-081LS E6327
Description
DIODE ARRAY 80V 100MA TSSLP-8
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAR 90-081LS E6327

Diode Type
PIN - 4 Independent
Voltage - Peak Reverse (max)
80V
Current - Max
100mA
Capacitance @ Vr, F
0.35pF @ 1V, 1MHz
Resistance @ If, F
800 mOhm @ 10mA, 100MHz
Power Dissipation (max)
150mW
Package / Case
8-TSSLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000435922
1
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
V
V
V
Reverse parallel resistance
V
V
V
Forward resistance
I
I
I
Charge carrier life time
I
R
I-region width
Insertion loss
I
I
I
Isolation
V
V
V
Single BAR90 diode in series configuration, Z = 50 Ω
F
F
F
F
F
F
F
R
R
R
R
R
R
R
R
R
R
L
= 1 mA, f = 100 MHz
= 3 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, measured at I
= 1 mA, f = 1.8 GHz
= 3 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 100 Ω
= 1 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 0.9 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 2.45 GHz
1)
1)
R
= 3 mA, I
A
= 25°C, unless otherwise specified
R
= 6 mA,
3
Symbol
C
R
r
τ
W
I
I
L
SO
f
T
P
rr
I
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.25
0.19
0.18
0.16
0.11
0.08
18.5
13.5
11.5
typ.
750
1.3
0.8
0.3
35
20
2
5
4
BAR90-081LS
max.
0.35
2009-01-26
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
k Ω
ns
µm
dB

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