BF1212,215 NXP Semiconductors, BF1212,215 Datasheet - Page 13

• Manufacturer Part Number: BF1212,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF1212,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1962-2; 934057517215; BF1212

NXP Semiconductors
2003 Nov 14
N-channel dual-gate MOS-FETs
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
13
1
1.15
e 1
A
2.2
2.0
H E
BF1212; BF1212R; BF1212WR
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R