BF1212,215 NXP Semiconductors, BF1212,215 Datasheet - Page 9

• Manufacturer Part Number: BF1212,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF1212,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1962-2; 934057517215; BF1212

NXP Semiconductors
2003 Nov 14
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
= 12 mA; T
= 12 mA; T
(mS)
10
y is
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
functions of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
ϕ fs
y fs
b is
f (MHz)
f (MHz)
g is
MLE247
MLE245
10
10
3
3
−10
−10
−1
(deg)
ϕ fs
2
9
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
V
I
Fig.20 Output admittance as a function of
D
D
DS
DS
= 12 mA; T
= 12 mA; T
(mS)
(μS)
10
y os
y rs
10
10
= 5 V; V
= 5 V; V
10
10
BF1212; BF1212R; BF1212WR
−1
1
1
3
2
10
10
functions of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
g os
ϕ rs
y rs
f (MHz)
f (MHz)
Product specification
MLE246
MLE248
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ rs
3
2