ATF-33143-BLKG Avago Technologies US Inc., ATF-33143-BLKG Datasheet - Page 5

• Manufacturer Part Number: ATF-33143-BLKG
• Description: IC PHEMT 1.9GHZ 80MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-33143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.5dB
• Current - Test: 80mA
• Voltage - Test: 4V
• Power - Output: 22dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 600 mW
• Drain Source Voltage Vds: 5.5 V
• Gate-source Breakdown Voltage: - 5 V
• Continuous Drain Current: 305 mA
• Maximum Operating Temperature: + 160 C
• Maximum Drain Gate Voltage: - 5 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1862; ATF-33143-BLKG

ATF-33143 Typical Performance Curves,
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between
2. Quiescent drain current, I
5
Figure 12. F
Figure 14. F
V
Figure 16. OIP3, P
3.9 GHz.
DS
1.5
1.0
0.5
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
frequency and dc bias point. At lower values of I
P
active biasing.
25
20
15
10
35
30
25
20
15
10
1dB
0
5
= 4V, I
5
0
0
0
0
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
DS
min
min
20
= 80 mA.
2
2
80 mA
60 mA
vs. Frequency and Current at 4V.
and G
FREQUENCY (GHz)
FREQUENCY (GHz)
1dB
40
, NF and Gain vs. Bias
a
25C
-40C
85C
I
vs. Frequency and Temp at
DSQ
4
4
60
(mA)
6
6
DSQ
80
, is set with zero RF drive applied. As P
8
8
100
[1,2]
P
OIP3
Gain
NF
1dB
at
120
10
10
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
continued
dsq
the device is running closer to class B as power output approaches P
Figure 13. Associated Gain vs. Frequency and
Current at 4V.
Figure 15. P
V
Figure 17. OIP3, P
5.8 GHz.
DS
30
25
20
15
10
35
30
25
20
15
10
40
35
30
25
20
15
5
0
= 4V, I
5
0
0
0
0
DS
1dB
20
1dB
= 80 mA.
2
2000
is approached, the drain current may increase or decrease depending on
, OIP3 vs. Frequency and Temp at
FREQUENCY (GHz)
FREQUENCY (MHz)
1dB
40
, NF and Gain vs. Bias
I
DSQ
4
4000
60
(mA)
P
OIP3
1dB
6
80
6000
80 mA
60 mA
8
100
[1,2]
25C
-40C
85C
Gain
NF
at
8000
120
10
3
2
1
0
1dB
. This results in higher