BLF542,112 NXP Semiconductors, BLF542,112 Datasheet - Page 3

• Manufacturer Part Number: BLF542,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF542,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 500MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 5 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (max): 500MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@15Vmohm
• Input Capacitance (typ)@vds: 14@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 59%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2417; 934006660112; BLF542; BLF542

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 18
V
V
I
P
T
T
R
R
handbook, halfpage
D
stg
j
SYMBOL
SYMBOL
DS
GS
tot
th j-mb
th mb-h
UHF power MOS transistor
(1) Current in this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 25 C.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
(1)
Fig.2 DC SOAR.
PARAMETER
10
V DS (V)
DSon
(2)
.
MRA735
PARAMETER
10
2
T
mb
= 25 C
3
handbook, halfpage
(1) Continuous operation.
(2) Short time operation during mismatch.
CONDITIONS
P tot
(W)
35
30
25
20
15
10
5
0
10
Fig.3 Power derating curves.
30
50
(1)
(2)
70
MIN.
65
VALUE
90
8.8
0.4
Product specification
65
1.5
20
+150
200
110
MAX.
20
T h (
BLF542
MRA734
o
C)
130
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT