BLF542,112 NXP Semiconductors, BLF542,112 Datasheet - Page 7

TRANSISTOR RF DMOS SOT171A

BLF542,112

Manufacturer Part Number
BLF542,112
Description
TRANSISTOR RF DMOS SOT171A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF542,112

Package / Case
SOT-171A
Transistor Type
N-Channel
Frequency
500MHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
1.5A
Current - Test
50mA
Voltage - Test
28V
Power - Output
5W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
5 Ohms
Transistor Polarity
N-Channel
Configuration
Single Quad Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.5 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
5W
Power Gain (typ)@vds
16.5@28VdB
Frequency (max)
500MHz
Package Type
CDFM
Pin Count
6
Forward Transconductance (typ)
0.24S
Drain Source Resistance (max)
5000@15Vmohm
Input Capacitance (typ)@vds
14@28VpF
Output Capacitance (typ)@vds
9.4@28VpF
Reverse Capacitance (typ)
1.7@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
59%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
20000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2417
934006660112
BLF542
BLF542

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF542,112
Manufacturer:
Skyworks
Quantity:
1 400
Philips Semiconductors
2003 Sep 18
handbook, full pagewidth
handbook, halfpage
UHF power MOS transistor
Class-B operation; V
Z
Fig.9
f = 500 MHz.
L
= 9.7 + j24.5 ; f = 500 MHz.
(dB)
G p
20
15
10
5
0
0
Power gain and efficiency as functions of
load power; typical values.
input
50
2

DS
= 28 V; I
G p
C1
4
DQ
L1
= 10 mA;
6

C2
L2
Fig.11 Test circuit for class-B operation.
8
P L (W)
C3
C4
MRA969
L3
10
R2
80
60
40
20
0
(%)


L4
R1
C5
DUT
R4
R3
7
V DD =
handbook, halfpage
L5
Class-B operation; V
Z
Fig.10 Load power as a function of input power;
L

= 9.7 + j24.5 ; f = 500 MHz.
L8
L9
28 V
C6
C7
C8
(W)
P L
10
8
6
4
2
0
L6
0
C10
typical values.
C9
0.2
DS
L7
C12
= 28 V; I
C13
C11
DQ
0.4
= 10 mA;
MBB760
output
50
Product specification
0.6
P IN (W)
BLF542
MRA970
0.8

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