BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 2

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
FEATURES
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.
Matched gate-source voltage (V
groups are available on request.
PINNING - SOT123A
QUICK REFERENCE DATA
RF performance at T
2003 Sep 02
CW, class-B
PIN
High power gain
Low noise figure
Easy power control
Good thermal stability
Withstands full load mismatch.
VHF power MOS transistor
1
2
3
4
drain
source
gate
source
MODE OF OPERATION
DESCRIPTION
h
= 25 C in a class-B test circuit.
GS
)
lfpage
PIN CONFIGURATION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
(MHz)
175
1
2
f
2
Fig.1 Simplified outline and symbol.
V
(V)
28
DS
MSB057
4
3
WARNING
CAUTION
(W)
P
30
L
g
MBB072
(dB)
G
13
p
Product specification
d
s
BLF245
(%)
50
D