BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 6

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: T
2003 Sep 02
MODE OF OPERATION
CW, class-B
handbook, halfpage
h
VHF power MOS transistor
= 25 C; R
V
Fig.8
GS
(pF)
C rs
= 0; f = 1 MHz.
20
10
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
th mb-h
= 0.3 K/W; R1 = 1 k .
10
h
= 25 C; R
(MHz)
175
175
f
th mb-h
20
12.5
V DS (V)
V
(V)
28
= 0.3 K/W; at rated load power.
DS
MRA920
30
(mA)
I
50
50
DQ
(W)
P
30
12
6
L
typ. 15.5
typ. 12
(dB)
G
13
p
typ. 67
typ. 66
(%)
50
D
2.0
2.4
( )
j2.7
j2.5
Z
i
(1)
Product specification
BLF245
3.9
3.8
( )
Z
L
j4.4
j1.3