BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 12

• Manufacturer Part Number: BLF647,112
• Description: TRANSISTOR RF DMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF647,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 600MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Voltage - Test: 28V
• Power - Output: 120W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 290000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2419; 934056498112; BLF647; BLF647

Philips Semiconductors
2001 Nov 27
handbook, full pagewidth
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.
B1
V bias
C1
C2
95
L1
L2
C9
C8
C7
R1
R3
R2
C6
3
C5
L15
L16
12
C10
C11
3
C12
C13
8
C14
B2
L14
V D
C18
C15
C19
R4
C16
95
C17
C20
Product specification
MGW548
BLF647
80