BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 15

TRANSISTOR RF DMOS SOT540A

BLF647,112

Manufacturer Part Number
BLF647,112
Description
TRANSISTOR RF DMOS SOT540A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF647,112

Package / Case
SOT540A
Transistor Type
LDMOS
Frequency
600MHz
Gain
14.5dB
Voltage - Rated
65V
Current Rating
18A
Voltage - Test
28V
Power - Output
120W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.16 Ohm (Typ) @ 9 V
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
18 A
Power Dissipation
290000 mW
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2419
934056498112
BLF647
BLF647
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
NOTES
2001 Nov 27
15

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