PD85035-E STMicroelectronics, PD85035-E Datasheet - Page 12

• Manufacturer Part Number: PD85035-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85035-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 8A
• Current - Test: 350mA
• Voltage - Test: 13.6V
• Power - Output: 15W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to + 15 V
• Continuous Drain Current: 8 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 40W(Typ)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO
• Pin Count: 3
• Input Capacitance (typ)@vds: 76@12.5VpF
• Output Capacitance (typ)@vds: 45@12.5VpF
• Reverse Capacitance (typ): 1.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 72%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8299; 497-8299-5; 497-8299; PD85035-E

Package mechanical data
PD85035-E, PD85035S-E
Figure 15. Tube information
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