PD85035-E STMicroelectronics, PD85035-E Datasheet - Page 3

• Manufacturer Part Number: PD85035-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85035-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 8A
• Current - Test: 350mA
• Voltage - Test: 13.6V
• Power - Output: 15W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to + 15 V
• Continuous Drain Current: 8 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 40W(Typ)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO
• Pin Count: 3
• Input Capacitance (typ)@vds: 76@12.5VpF
• Output Capacitance (typ)@vds: 45@12.5VpF
• Reverse Capacitance (typ): 1.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 72%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8299; 497-8299-5; 497-8299; PD85035-E

PD85035-E, PD85035S-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
C
= 70 °C)
CASE
= 25 °C)
-65 to +150
-0.5 to +15
Value
Value
165
1.0
40
95
8
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
3/15