PD85035-E STMicroelectronics, PD85035-E Datasheet - Page 4

• Manufacturer Part Number: PD85035-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85035-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 8A
• Current - Test: 350mA
• Voltage - Test: 13.6V
• Power - Output: 15W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to + 15 V
• Continuous Drain Current: 8 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 40W(Typ)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO
• Pin Count: 3
• Input Capacitance (typ)@vds: 76@12.5VpF
• Output Capacitance (typ)@vds: 45@12.5VpF
• Reverse Capacitance (typ): 1.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 72%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8299; 497-8299-5; 497-8299; PD85035-E

Electrical characteristics
2
2.1
2.2
2.3
2.4
4/15
Electrical characteristics
Static
Table 4.
Dynamic
Table 5.
ESD protection characteristics
Table 6.
Moisture sensitivity level
Table 7.
mismatch
Symbol
Symbol
V
V
C
C
Load
P3dB
DS(ON)
I
C
I
GS(Q)
GSS
G
DSS
h
OSS
RSS
ISS
D
P
T
CASE
V
V
V
V
All phase angles
V
V
V
V
V
V
V
Static
Dynamic
ESD protection characteristics
Moisture sensitivity level
DD
DD
DD
DD
GS
GS
DS
GS
GS
GS
GS
= 13.6 V, I
= 13.6 V, I
= 13.6 V, I
= 1 7V, I
= 0 V
= 5 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= +25 °C
Human body model
Test methodology
DQ
Test conditions
Machine model
DQ
DQ
DQ
J-STD-020B
= 350 mA, P
= 350 mA
= 350 mA, P
= 350 mA, P
Test conditions
Test conditions
V
V
V
V
V
I
DS
I
D
D
DS
DS
DS
DS
= 3 A
= 350 mA
= 0 V
= 25 V
= 12.5 V
= 12.5 V
= 12.5 V
OUT
OUT
OUT
= 50 W, f = 870 MHz
= 15 W, f = 870 MHz
= P3dB, f = 870 MHz
f = 870 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
20:1
Min
Min
PD85035-E, PD85035S-E
35
15
60
Typ
0.64
Typ
40
17
72
3.9
1.4
76
45
Rating
MSL 3
Class
M3
2
Max
Max
0.7
1
1
VSWR
Unit
Unit
dB
μA
μA
W
pF
pF
pF
%
V
V