MRF6V2010NBR5 Freescale Semiconductor, MRF6V2010NBR5 Datasheet - Page 14

• Manufacturer Part Number: MRF6V2010NBR5
• Description: MOSFET RF N-CH 50V TO-272-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2010NBR5

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 23.9dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 10W
• Package / Case: TO-272-2
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: - 5 V or 10 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 10W
• Power Gain (typ)@vds: 23.9dB
• Frequency (min): 10MHz
• Frequency (max): 450MHz
• Package Type: TO-272 EP
• Pin Count: 3
• Input Capacitance (typ)@vds: 16.3@50VpF
• Output Capacitance (typ)@vds: 7.3@50VpF
• Reverse Capacitance (typ): 0.13@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 62%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 110V
• Rf Transistor Case: TO-272
• Filter Terminals: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Gate-source Voltage: 10V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 220MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF6V2010NBR5TR

PACKAGE DIMENSIONS
MRF6V2010NR1 MRF6V2010NBR1
RF Device Data
Freescale Semiconductor
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