MRF6V2010NBR5 Freescale Semiconductor, MRF6V2010NBR5 Datasheet - Page 2

• Manufacturer Part Number: MRF6V2010NBR5
• Description: MOSFET RF N-CH 50V TO-272-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2010NBR5

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 23.9dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 10W
• Package / Case: TO-272-2
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: - 5 V or 10 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 10W
• Power Gain (typ)@vds: 23.9dB
• Frequency (min): 10MHz
• Frequency (max): 450MHz
• Package Type: TO-272 EP
• Pin Count: 3
• Input Capacitance (typ)@vds: 16.3@50VpF
• Output Capacitance (typ)@vds: 7.3@50VpF
• Reverse Capacitance (typ): 0.13@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 62%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 110V
• Rf Transistor Case: TO-272
• Filter Terminals: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Gate-source Voltage: 10V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 220MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF6V2010NBR5TR

2
MRF6V2010NR1 MRF6V2010NBR1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD 22--A113, IPC/JEDEC J--STD--020
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
(V
(I
(V
(V
(V
(V
(V
(V
(V
(V
D
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 mA, V
= 5 Vdc, V
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
= 0 Vdc)
GS
GS
= 28 μAdc)
= 30 mAdc, Measured in Functional Test)
= 70 mAdc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
= 30 mA, P
IRL
GSS
DSS
DSS
η
3
oss
rss
iss
ps
D
out
22.5
Min
110
Package Peak Temperature
1.5
58
—
—
—
—
—
—
—
—
1
= 10 W, f = 220 MHz, CW
1.68
2.68
0.26
0.13
16.3
23.9
260
Typ
--14
7.3
62
—
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
25.5
2.5
3.5
10
50
—
—
—
—
—
—
--9
3
RF Device Data
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
°C
pF
pF
pF
%